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Automatic RF MESFET Amplifier
Drain-Current Controllers
ELECTRICAL CHARACTERISTICS (continued)
(V GATEVSS = V AVSS = -5.5V to -4.75V, V AVDD = +4.75V to +5.25V, V DVDD = +2.7V to V AVDD , external V REFADC = +2.5V, external
V REFDAC = +2.5V, C REFADC = C REFDAC = 0.1μF, V OPSAFE1 = V OPSAFE2 = 0, V RCS1+ = V RCS2+ = +5V, C FILT1 = C FILT3 = 1nF, C FILT2 =
C FILT4 = 1nF, V AGND = V DGND = 0, V ADCIN0 = V ADCIN1 = 0, V ACLAMP1 = V ACLAMP2 = -5V, T J = T MIN to T MAX , unless otherwise noted.
All typical values are at T J = +25°C.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
CLASS AB OUTPUT CHANNEL
Untrimmed Offset
Offset Temperature Coefficient
Gain
Gain Error
(Note 1)
50
0
-2
0.1
μV
mV/ o C
%
GATE-DRIVE AMPLIFIER/INTEGRATOR
I GATE = -1mA
V GATEVSS
+1
V
Output Gate-Drive Voltage Range
(Note 2)
V GATE
I GATE = +1mA
I GATE = -10mA
V GATEVSS
+ 1.2
-0.15
-4
mV
V
I GATE = +10mA
-1
-20
mV
Settles to within ±0.5% of final value, R S
Gate Voltage Settling Time —
MAX11015
t GATE
= 50 , C GATE = 15μF, see GATE Output
Resistance vs. GATE Voltage in the
1.1
ms
Typical Operating Characteristics
Output Capacitive Load (Note 3)
C GATE
No series resistance, R S = 0
R S = 500
0
0
15,000
0.5
nF
Gate Voltage Noise
Maximum Power-On Transient
RMS noise, 1kHz to 1MHz
C LOAD = 1nF
250
±100
nV/ Hz
mV
Output Short-Circuit Current Limit
Output Safe Switch On-
Resistance
I SC
R OPSW
Sinking or sourcing
Clamp GATE1 to ACLAMP1, GATE2 to
ACLAMP2 (Note 4)
±25
3.6
mA
k
ADC DC ACCURACY
Resolution
12
Bits
Differential Nonlinearity
DNL ADC
±2
LSB
Integral Nonlinearity
Offset Error
INL ADC
(Note 5)
±2
±2
±4
LSB
LSB
Gain Error
Gain Temperature Coefficient
Offset Temperature Coefficient
Channel-to-Channel Offset
Matching
Channel-to-Channel Gain
Matching
(Note 6)
±2
±0.4
±0.4
±0.1
±0.1
±4
LSB
ppm/ o C
ppm/ o C
LSB
LSB
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